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我們以開(kāi)放和協(xié)作的方式與世界各地的優(yōu)秀大學(xué)、研究中心和工業(yè)合作伙伴合作。到目前為止，我們已經(jīng)開(kāi)發(fā)了各種定制的 GaN 外延結(jié)構(gòu)，以滿(mǎn)足我們客戶(hù)和合作伙伴的特定設(shè)計(jì)。可以在此處列出的出版物中找到更多詳細(xì)信息。想與我們討論您的想法嗎？聯(lián)系郵箱：info@enkris.com。

A gallium nitride HEMT that enhances. Parker,M. Nature Electronics 4, 858 (2021).
Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV M.Xiao1,Y.Ma,Z.Du,V.Pathirana,K.Cheng,A.Xie,E.Beam,Y.Cao,F.Udrea,H.Wang,Y.Zhang 2021 IEEE International Electron Devices Meeting (IEDM)
10 kV, 39 mΩ·cm2?Multi-Channel AlGaN/GaN Schottky Barrier Diodes MingXiao;?YunweiMa;?KaiLiu;?KaiCheng;?YuhaoZhang IEEE Electron Device Letters, vol. 42, no. 6, pp. 808-811, June 2021
Multi-channel nanowire devices for efficient power conversion L.Nela,J.Ma,C.Erine,P.Xiang,T.-H.Shen,V.Tileli,T.Wang,K.Cheng&E.Matioli Nature Electronics volume 4, pages 284-290(2021)
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate N.Chowdhury,Q.Xie,M.Yuan,K.Cheng,H.W.ThenandT.Palacios, IEEE Electron Device Letters, vol. 41, no. 6, pp. 820-823, June 2020
GaN Nanowire Field Emitters with a Self-Aligned Gate Process P.Shihetal., 2020 Device Research Conference (DRC), Columbus, OH, USA, 2020, pp. 1-2
Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode with Improved On-Current and Ideality Factor Zhang,Yanni;Zhang,Jincheng;Liu,Zhihong;Xu,Shengrui;Cheng,Kai;Ning,Jing;Zhang,Chunfu;Zhang,Lei;Ma,Peijun;Zhou,Hong IEEE Electron Device Letters, vol. 41, no. 3, pp. 457-460, March 2020

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